Step instability of the In0.2Ga0.8As (001) surface during annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference31 articles.
1. Morphological instability of a terrace edge during step-flow growth
2. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
3. Lateral ordering, strain, and morphology evolution of InGaAs/GaAs(001) quantum dots due to high temperature postgrowth annealing
4. InGaAs/GaAs three-dimensionally-ordered array of quantum dots
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