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Lateral ordering, strain, and morphology evolution of InGaAs/GaAs(001) quantum dots due to high temperature postgrowth annealing

  • Published:2010-02-22 Issue:8 Volume:96 Page:083102
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Riotte M.,Fohtung E.,Grigoriev D.,Minkevich A. A.,Slobodskyy T.,Schmidbauer M.,Metzger T. H.,Hu D. Z.,Schaadt D. M.,Baumbach T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operando Imaging of Strain and Defects at the Nanoscale;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. Controlling structural properties of positioned quantum dots;Journal of Crystal Growth;2013-05

3. Growth and characterization of site-selective quantum dots;physica status solidi (a);2012-12

4. A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines;Review of Scientific Instruments;2012-10

5. Investigation of buried quantum dots using grazing incidence X-ray diffraction;Materials Science and Engineering: B;2012-06
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