The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3552967
Reference19 articles.
1. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
2. MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers
3. High-power quantum-dot lasers at 1100 nm
4. Annealing effects on faceting of InAs∕GaAs(001) quantum dots
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1. InAs/GaAs quantum dot semiconductor saturable absorber for controllable dual-wavelength passively Q-switched fiber laser;Optics Express;2019-07-10
2. Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths;Crystal Research and Technology;2014-03-25
3. Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages;Journal of Physics D: Applied Physics;2013-07-09
4. Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001);Japanese Journal of Applied Physics;2013-04-01
5. Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots;Nanoscale Research Letters;2012-10-30
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