Long-Wavelength Infrared Semiconductor Lasers
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John Wiley & Sons, Inc.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Laser Fundamentals;Handbook of Defence Electronics and Optronics;2018-03-31
2. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs;Journal of Physics D: Applied Physics;2018-01-30
3. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy;Journal of Applied Physics;2014-07-28
4. Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
5. InAs-based interband cascade lasers with emission wavelength at 10.4 [micro sign]m;Electronics Letters;2012
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