InAs-based interband cascade lasers with emission wavelength at 10.4 [micro sign]m-Reference-Cited by-同舟云学术

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InAs-based interband cascade lasers with emission wavelength at 10.4 [micro sign]m

Published:2012 Issue:2 Volume:48 Page:113
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tian Z.,Li L.,Ye H.,Yang R.Q.,Mishima T.D.,Santos M.B.,Johnson M.B.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2011.3555?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Schießl, U.P., John, J., and McCann, P.J.: ‘Lead-chalcogenide-based mid-infrared diode lasers’in’, Choi, H.K., Long-wavelength infrared semiconductor lasers, (John Wiley & Sons, Hoboken, NJ 2004),Chap. 4

2. Wavelength tuning limitations in optically pumped type-II antimonide lasers

3. Plasmon-Waveguide Interband Cascade Lasers Near 7.5 $\mu$m

4. Infrared laser based on intersubband transitions in quantum wells

5. Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature

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2. Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions;Applied Physics Letters;2023-07-24

3. Enhanced performance of InAs-based interband cascade lasers emitting between 10–13 µm;Semiconductor Science and Technology;2022-12-30

4. Nonlinear Dynamics of Mid-Infrared Interband Cascade Lasers Subject to Variable-Aperture Optical Feedback;Photonics;2022-06-10

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