Study of a 4H–SiC epitaxial n-channel MOSFET
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference7 articles.
1. Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers
2. DC characterization of 4H-SiC depletion mode MOS field effect transistor
3. Normally-off 4H-SiC trench-gate MOSFETs with high mobility
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1. Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching;Fourth Seminar on Novel Optoelectronic Detection Technology and Application;2018-02-20
2. Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors;Chinese Physics B;2016-03
3. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination;Chinese Physics B;2014-05
4. The fabrication and characterization of 4H—SiC power UMOSFETs;Chinese Physics B;2013-02
5. Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al 2 O 3 /SiO 2 stacked dielectric;Chinese Physics B;2012-08
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