The fabrication and characterization of 4H—SiC power UMOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=2/a=027302/pdf
Reference15 articles.
1. On-State Characteristics of SiC power UMOSFETs on 115-/spl mu/m drift Layers
2. Atomic layer deposited high-k Hf x Al(1−x)O as an alternative gate dielectric for 4H-SiC MIS based transistors
3. Study of a 4H–SiC epitaxial n-channel MOSFET
4. Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes
5. High-voltage (3 kV) UMOSFETs in 4H-SiC
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1. Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*;Chinese Physics B;2021-02-01
2. Density functional study on electric structure and optical properties in Na-doped 3C-SiC;Modern Physics Letters B;2019-08-30
3. Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching;Fourth Seminar on Novel Optoelectronic Detection Technology and Application;2018-02-20
4. Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO;Chinese Physics B;2017-12
5. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD;Journal of Semiconductors;2016-06
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