DC characterization of 4H-SiC depletion mode MOS field effect transistor-Reference-Cited by-同舟云学术

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DC characterization of 4H-SiC depletion mode MOS field effect transistor

Published:2006-03 Issue:3 Volume:50 Page:384-387
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhao P.,Rusli ,Zhu C.L.,Wang H.,Tin C.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Physical properties of SiC;Choyke;MRS Bull,1997

2. SiC integrated MOSFETs;Onda;Phys Status Solidi A,1997

3. Critical nature of oxide/interface quality for SiC power devices;Baliga;Microelectron Eng,1995

4. Direct current characterization of depletion-mode 6H-SiC MOSFETs from 294 to 723K;Casady;Solid-State Electron,1996

5. Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC;Sheppard;IEEE Electron Dev,1994

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of a 4H–SiC epitaxial n-channel MOSFET;Chinese Physics B;2010-04

2. DC characterization of accumulation layer and bulk layer electron mobility in 4H–SiC depletion mode MOSFET;Solid-State Electronics;2007-08

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