Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K

Published:1996-06 Issue:6 Volume:39 Page:777-784
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Casady J.B.,Cressler J.D.,Dillard W.C.,Johnson R.W.,Agarwal A.K.,Siergiej R.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. A hybrid silicon carbide differential amplifier for 350 degrees C operation

2. Trans. 2nd Int. High Temperature Electronics Conf.;Brown,1994

3. Monolithic NMOS digital integrated circuits in 6H-SiC

4. Proc. 53rd Annual Device Research Conf.;Chang,1995

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents;Technology Analysis & Strategic Management;2022-07-28

2. Investigation of the reliability of 4H–SiC MOS devices for high temperature applications;Microelectronics Reliability;2011-08

3. 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation;Materials Science Forum;2011-03

4. DRY ETCHING OF SIC;Silicon Carbide Microelectromechanical Systems for Harsh Environments;2006-06

5. DC characterization of 4H-SiC depletion mode MOS field effect transistor;Solid-State Electronics;2006-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP