4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/5/057102/pdf
Reference14 articles.
1. Advanced High-Voltage 4H-SiC Schottky Rectifiers
2. Study of a 4H–SiC epitaxial n-channel MOSFET
3. Characterization of 4H—SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy
4. Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes
5. Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
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