Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/8/088502/pdf
Reference7 articles.
1. 1000-V, 30-A 4H-SiC BJTs with high current gain
2. 4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2/
3. 4 kV 4H-SiC epitaxial emitter bipolar junction transistors
4. Geometrical effects in high current gain 1100-V 4H-SiC BJTs
5. Analytical models for the base transit time of a bipolar transistor with double base epilayers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base;Chinese Physics B;2015-06
2. Variation of the nanostructural feature of nc-SiC:H thin films with post-deposition thermal annealing;Thin Solid Films;2014-11
3. Structural and electrical characterization of annealed Si 1− x C x /SiC thin film prepared by magnetron sputtering;Chinese Physics B;2014-05
4. A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain;Chinese Physics B;2013-09
5. The fabrication and characterization of 4H—SiC power UMOSFETs;Chinese Physics B;2013-02
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