Structural and electrical characterization of annealed Si 1− x C x /SiC thin film prepared by magnetron sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/5/058105/pdf
Reference30 articles.
1. Optical gain in monodispersed silicon nanocrystals
2. Fabrication and characterization of Si nanocrystals in SiC matrix produced by magnetron cosputtering
3. Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer
4. Research on high-voltage 4H—SiC P—i—N diode with planar edge junction termination techniques
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1. Opto-electrical properties of amorphous silicon carbide thin films adjustably prepared by magnetron sputtering at room temperature;Applied Surface Science;2023-09
2. Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering;Chinese Physics B;2017-08
3. Structural properties and preparation of Si-rich Si1−xCx thin films by radio-frequency magnetron sputtering;Applied Surface Science;2016-02
4. α-Fe2O3 nanopillar arrays fabricated by electron beam evaporation for the photoassisted degradation of dyes with H2O2;RSC Advances;2016
5. Novel compounds in the hafnium nitride system: first principle study of their crystal structures and mechanical properties;Acta Physica Sinica;2016
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