Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/6/068502/pdf
Reference22 articles.
1. 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ($ \hbox{000}\bar{\hbox{1}}$)
2. 21-kV SiC BJTs With Space-Modulated Junction Termination Extension
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1. Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss *;Semiconductor Science and Technology;2020-02-01
2. Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile;Chinese Physics B;2018-10
3. Highly-stable black phosphorus field-effect transistors with low density of oxide traps;npj 2D Materials and Applications;2017-07-17
4. Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs;Superlattices and Microstructures;2017-02
5. -ray detector based on n-type 4H-SiC Schottky barrier diode;Acta Physica Sinica;2016
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