Highly-stable black phosphorus field-effect transistors with low density of oxide traps
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://www.nature.com/articles/s41699-017-0025-3.pdf
Reference43 articles.
1. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).
2. Wei, Q. & Peng, X. Superior mechanical flexibility of phosphorene and few-layer black phosphorus. Appl. Phys. Lett. 104, 251915 (2014).
3. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).
4. Liu, H., Du, Y., Deng, Y. & Peide, D. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chem. Soc. Rev. 44, 2732–2743 (2014).
5. Novoselov, K. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).
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