Variation of the nanostructural feature of nc-SiC:H thin films with post-deposition thermal annealing-Reference-Cited by-同舟云学术

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Variation of the nanostructural feature of nc-SiC:H thin films with post-deposition thermal annealing

Published:2014-11 Issue: Volume:571 Page:238-244
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sen Chan-Dany,Son Jong-Ick,Kim Hyo-Han,Yun Han-Sol,Cho Nam-Hee

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication;Pecholt;Int. J. Adv. Manuf. Technol.,2008

2. Low-temperature growth of SiC thin films on Si and 6H-SiC by solid-source molecular beam epitaxy;Fissel;Appl. Phys. Lett.,1995

3. Ultra-fine β-SiC quantum dots fabricated by laser ablation in reactive liquid at room temperature and their violet emission;Yang;J. Mater. Chem.,2009

4. High performance a-Si solar cells and narrow bandgap materials;Nakano;Proc. Mater. Res. Soc.,1985

5. Quality improvement in a-Si films and their application to a-Si solar cells;Matsuoka;IEEE Trans. Electron Devices,1990

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