An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/8/086105/pdf
Reference16 articles.
1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
2. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
3. Calculations of two dimensional electron gas distributions in AlGaN/GaN material system
4. Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface
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2. Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: An investigation into self-heating and geometrical effects;Journal of Computational Electronics;2021-10-13
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4. Simulation study of high voltage GaN MISFETs with embedded PN junction*;Chinese Physics B;2020-07-01
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