Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20081350?crawler=true&mimetype=application/pdf
Reference11 articles.
1. 100 W C-band single-chip GaN FET power amplifier
2. The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs
3. Mechanism of current collapse removal in field-plated nitride HFETs
4. Leakage mechanism in GaN and AlGaN Schottky interfaces
5. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
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2. Effect of O2 plasma surface treatment on gate leakage current in AlGaN/GaN HEMT;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17
3. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects;Journal of Applied Physics;2021-10-28
4. A Planar Distributed Channel AlGaN/GaN HEMT Technology;IEEE Transactions on Electron Devices;2019-05
5. Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage;IEEE Electron Device Letters;2017-09
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