100 W C-band single-chip GaN FET power amplifier-Reference-Cited by-同舟云学术

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100 W C-band single-chip GaN FET power amplifier

Published:2006 Issue:5 Volume:42 Page:283
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Okamoto Y.,Wakejima A.,Ando Y.,Nakayama T.,Matsunaga K.,Miyamoto H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20064067?crawler=true&mimetype=application/pdf

Reference13 articles.

1. Microwave Products TIM4460-60SL, Toshiba Corporation

2. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

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