A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

Author:

Lu Y.,Zhao B.C.,Zheng J.X.,Zhang H.S.,Zheng X.F.,Ma X.H.,Hao Y.,Ma P.J.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. GaN-based RF power devices and amplifiers;Mishra;Proc IEEE,2008

2. A C-band GaN based linear power amplifier with 55.7% PAE;Luo;Solid State Electron,2010

3. S and C band over 100 W GaN HEMT 1chip high power amplifiers with cell division configuration;Yamanaka,2005

4. C-band GaN HEMT power amplifier with 220 W output power;Yamanaka,2007

5. 100 W C-band single-chip GaN FET power amplifier;Okamoto;IEEE Electron Lett,2006

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Large Signal Model of GaN HEMT with the Transconductance Compensation Circuit;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

2. The Internal Matching Power Amplifier Design Based on Band-pass Filter with Parasitic Parameter;2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2022-08-12

3. A UHF-band 100 W broadband hybrid GaN power amplifier based on the regional modulation of impedance distribution method;AEU - International Journal of Electronics and Communications;2021-11

4. Highly accurateGaN HEMTmodel based on theAngelovmodel with error compensation;Microwave and Optical Technology Letters;2020-07-14

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3