Author:
Lu Y.,Zhao B.C.,Zheng J.X.,Zhang H.S.,Zheng X.F.,Ma X.H.,Hao Y.,Ma P.J.
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. GaN-based RF power devices and amplifiers;Mishra;Proc IEEE,2008
2. A C-band GaN based linear power amplifier with 55.7% PAE;Luo;Solid State Electron,2010
3. S and C band over 100 W GaN HEMT 1chip high power amplifiers with cell division configuration;Yamanaka,2005
4. C-band GaN HEMT power amplifier with 220 W output power;Yamanaka,2007
5. 100 W C-band single-chip GaN FET power amplifier;Okamoto;IEEE Electron Lett,2006
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