Analytical Models for the 2DEG Density, AlGaN Layer Carrier Density, and Drain Current for AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Analytical Models for the 2DEG Density, AlGaN Layer Carrier Density, and Drain Current for AlGaN/GaN HEMTs

Published:2018-03 Issue:3 Volume:65 Page:936-944
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Swamy N. Somashekar,Dutta Aloke K.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8299498/08276313.pdf?arnumber=8276313

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Failure Mechanism Study of Ohmic Gate GaN HEMT under Overcurrent Stress;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors;Micromachines;2024-02-25

3. Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping;IEEE Transactions on Electron Devices;2024

4. Physics-Based Compact I–V Model for δ-Doped β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET Involving Parallel Conduction;IEEE Transactions on Electron Devices;2023-10

5. Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-24

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