SiC based Si/SiC heterojunction and its rectifying characteristics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference8 articles.
1. Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors
2. A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer
3. Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions
4. New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode
5. Study of a novel Si/SiC hetero-junction MOSFET
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1. Low-Temperature Direct Bonding of SiC to Si via Plasma Activation;Applied Sciences;2022-03-23
2. Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes;Semiconductor Science and Technology;2021-04-20
3. Adsorption characteristics composition of Ge and Si on 4H-SiC(0 0 0 1) surface;Journal of Crystal Growth;2020-02
4. First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction;Modern Physics Letters B;2015-10-25
5. Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode;Journal of Semiconductors;2015-05
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