A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference8 articles.
1. Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors
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1. Si/SiC heterojunction optically controlled transistor with charge compensation layer;MATEC Web of Conferences;2016
2. Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunctions;Chinese Physics B;2013-03
3. Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer;Chinese Physics B;2011-05
4. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure;Journal of Semiconductors;2010-04
5. SiC based Si/SiC heterojunction and its rectifying characteristics;Chinese Physics B;2009-11
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