First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction-Reference-Cited by-同舟云学术

First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction

Published:2015-10-25 Issue:29 Volume:29 Page:1550182
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

He Xiao-Min¹,Chen Zhi-Ming¹,Huang Lei¹,Li Lian-Bi¹²

Affiliation:

1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China

2. School of Science, Xi’an Polytechnic University, Xi’an 710048, China

Abstract

Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)/[Formula: see text]/6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)/[Formula: see text]/6H-SiC(0001) heterojunction are [Formula: see text]-[Formula: see text] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984915501821

Reference17 articles.

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