Hetero-epitaxy and structure characterization of Si films on 6H-SiC substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. A new design of the SiC light-activated Darlington power transistor
2. SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics
3. Hetero-epitaxial growth of SiCGe on SiC
4. Structure analysis of SiCGe films grown on SiC
5. Effect of hydrogen dilution on intrinsic a-Si:H layer between emitter and Si wafer in silicon heterojunction solar cell
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1. Low-Temperature Direct Bonding of SiC to Si via Plasma Activation;Applied Sciences;2022-03-23
2. On the crystallization behavior of sputter-deposited a-Si films on 4H-SiC;Thin Solid Films;2020-03
3. Adsorption characteristics composition of Ge and Si on 4H-SiC(0 0 0 1) surface;Journal of Crystal Growth;2020-02
4. The effect of surface modification of LaNi4.5Co0.5 hydride alloy with SiC layer on its hydrogen storage and kinetic electrochemical properties;OCHR PRZED KOROZ;2018
5. A novel plating apparatus for electrodeposition of Ni-SiC composite coatings using circulating-solution co-deposition technique;Journal of Alloys and Compounds;2017-03
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