Interface spacing, stability, band offsets, and electronic properties on a (001) SrHfO3/GaAs interface: First-principles calculations
Author:
Affiliation:
1. School of Mathematics and Physics, Bohai University, Liaoning, Jinzhou 121013, China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986312
Reference63 articles.
1. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
2. Structural properties and electronic structure ofHfO2-ZrO2composite films
3. Electronic structures of β-Si3N4(0001)/Si(111) interfaces: Perfect bonding and dangling bond effects
4. Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study
5. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
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