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Preferential growth of Si films on 6H-SiC(0001) C-face

  • Published:2012-11 Issue: Volume:261 Page:88-91
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Xie Long-fei,Chen Zhi-ming,Li Lian-bi,Yang Chen,He Xiao-min,Ye Na

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Hetero-epitaxy and structure characterization of Si films on 6H-SiC substrates;Li;Materials Letters,2011

2. SiC based Si/SiC heterojunction and its rectifying characteristics;Zhu;Chinese Physics B,2009

3. The preparation and optoelectronic characteristics of the p–n Si/SiC heterojunction;Zang;Electron Devices and Solid-State Circuits,2009

4. The 4:5 Si-to-SiC atomic lattice matching interfaces in the system of Si(111) heteroepitaxially grown on 6H-SiC(001) substrates;Yang;Solid State Communication,2012

5. Reconstruction models of cubic SiC surfaces;Pollmann;Journal of Physics: Condensed Matter,2004

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