The 4:5 Si-to-SiC atomic lattice matching interfaces in the system of Si(111) heteroepitaxially grown on 6H-SiC(001) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance
2. Deposition of n-type nanocrystalline SiC films and current transport mechanisms in nanocrystalline SiC/crystalline Si heterojunctions
3. High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
4. Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis
5. Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
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