Study of a novel Si/SiC hetero-junction MOSFET

Author:

Chen L.,Guy O.J.,Jennings M.R.,Igic P.,Wilks S.P.,Mawby P.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Optimum semiconductors for high-power electronics;Shenai;IEEE Trans Electron Devices,1989

2. Progress in silicon carbide semiconductor electronics technology;Neudeck;J Electron Mater,1995

3. Palmour JW, Singh R, Glass RC, Kordina O, Carter Jr CH. Silicon carbide for power devices. In: ISPSD; 1997. p. 25–32.

4. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;Solid-State Electron,1996

5. Comparison of 6H–SiC, 3C-SiC and Si for power devices;Bhatnagar;IEEE Trans Electron Devices,1993

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