Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs
Author:
Publisher
IOP Publishing
Subject
Astronomy and Astrophysics,Instrumentation,Nuclear and High Energy Physics
Link
https://iopscience.iop.org/article/10.1088/1674-1137/39/9/096101/pdf
Reference18 articles.
1. Assessments of SOI technologies for hardening
2. Total dose induced latch in short channel NMOS/SOI transistors
3. Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
4. Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
5. Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs
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1. Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs With Different Geometries for the Worst Case Bias Conditions;IEEE Transactions on Nuclear Science;2019-10
2. Analysis of optical properties of bio-smoke materials in the 0.25–14 μm band;Chinese Physics B;2019-03
3. Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment;Microelectronics Reliability;2018-09
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