Assessments of SOI technologies for hardening-Reference-Cited by-同舟云学术

Assessments of SOI technologies for hardening

Published:1988-12 Issue:3-4 Volume:8 Page:187-200
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Leray J.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Surface effects of radiation of transistors;Blair;IEEE Trans. Nucl. Sci.,1963

2. A CMOS-SOI 1.4 μm technology on 1300°C substrates without epitaxy;Auberton-Hervé,1988

3. Silicon on sapphire device photoconduction predictions;Philips;IEEE Trans. Nucl. Sci.,1974

4. Transient radiation effects in SOI memories;Davis;IEEE Trans. Nucl. Sci.,1985

5. Transient radiation effects in SOI static RAM cells;Nikakawa;IEEE Trans. Nucl. Sci.,1987

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3. The Soi Mosfet in a Harsh Environment;Silicon-on-Insulator Technology: Materials to VLSI;2004

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5. Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND;IEEE Transactions on Nuclear Science;2002-12