Author:
Alvarado J.,Boufouss E.,Kilchytska V.,Flandre D.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Production and propagation of single-event transients in high-speed digital logic ICs;Dodd;IEEE Trans Nucl Sci,2004
2. http://www-device.eecs.berkeley.edu/∼bsimsoi/.
3. Alvarado J, Kilchytska V, Boufouss E, Flandre D. Modeling of single event transients and total dose in partially depleted SOI CMOS circuits. In: EUROSOI 2010 Proc., Grenoble, France; 2010.
4. Harmonic distortion analysis using and improved charge sheet model for PD SOI MOSFETs;Alvarado;Microelectron J,2007
5. Alvarado J, Kilchytska V, Berger G, Flandre D. Efficient single event upset simulations of a tolerant PD SOI CMOS D flip–flop. In: RADECS 2009 Proc., Bruges, Belgium; 2009.
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