Author:
Alvarado J.,Boufouss E.,Kilchytska V.,Flandre D.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
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2. http://www-device.eecs.berkeley.edu/∼bsimsoi/.
3. Alvarado J, Kilchytska V, Boufouss E, Flandre D. Modeling of single event transients and total dose in partially depleted SOI CMOS circuits. In: EUROSOI 2010 Proc., Grenoble, France; 2010.
4. Harmonic distortion analysis using and improved charge sheet model for PD SOI MOSFETs;Alvarado;Microelectron J,2007
5. Alvarado J, Kilchytska V, Berger G, Flandre D. Efficient single event upset simulations of a tolerant PD SOI CMOS D flip–flop. In: RADECS 2009 Proc., Bruges, Belgium; 2009.
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