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Analysis of location and LET dependence of single event transient in 14 nm SOI FinFET

  • Published:2022-11 Issue: Volume:530 Page:13-17
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liu BaojunORCID,Li Chuang,Zhou Ping,Zhu Jing

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference29 articles.

1. Physical mechanisms inducing electron single-event upset;Caron;IEEE Trans. Nucl. Sci.,2018

2. Modeling single event transients in advanced devices and ICs;Artola;IEEE Trans. Nucl. Sci.,2015

3. Monte Carlo reliability model for single-event transient on combinational circuits;Liu;IEEE Trans. Nucl. Sci.,2017

4. Physically based predictive model for single event transients in CMOS gates;Saremi;IEEE Trans. Electron Devices,2016

5. Semiconductor Industry Association, “International Technology Roadmap for Semiconductors (ITRS)”, 2013 edition, http://public.itrs.net, 2013.

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