Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Del Alamo, J.A.: Nanometre-scale electronics with III–V compound semiconductors. Nature 479(7373), 317–323 (2011)
2. Takagi, S., Noguchi, M., Kim, M., et al.: III–V/Ge MOS device technologies for low power integrated systems. Solid-State Electron. 125, 82–102 (2016)
3. Benbakhti, B., Chan, K.H., Soltani, A., Kalna, K.: Device and circuit performance of the future hybrid III–V and Ge-based CMOS technology. IEEE Trans. Electron Devices 63(10), 3893–3899 (2016)
4. Gadlage, M.J., Ahlbin, J.R., Narasimham, B., et al.: Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes. IEEE Trans. Nucl. Sci. 57(6), 3336–3341 (2010)
5. Dodd, P.E., Shaneyfelt, M.R., Felix, J.A., Schwank, J.R.: Production and propagation of single-event transients in high-speed digital logic ICs. IEEE Trans. Nucl. Sci. 51(6), 3278–3284 (2004)
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