Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs With Different Geometries for the Worst Case Bias Conditions-Reference-Cited by-同舟云学术

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Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs With Different Geometries for the Worst Case Bias Conditions

Published:2019-10 Issue:10 Volume:66 Page:2207-2214
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Zheng Zhongshan^ORCID,Liu Xinyu,Zhao Xing,Zhao Kai,Gao Jiantou,Li Binhong,Yu Fang,Li Bo^ORCID,Luo Jiajun,Han Zhengsheng

Funder

Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/8877480/08809219.pdf?arnumber=8809219

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Total Ionization Dose (TID) Effects on 2D MOS Devices;Transactions on Electrical and Electronic Materials;2020-11-02

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