Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers-Reference-Cited by-同舟云学术

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Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

Published:2015-05 Issue:5 Volume:36 Page:054006
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Lei Yan,Liu Zhiqiang,He Miao,Yi Xiaoyan,Wang Junxi,Li Jinmin,Zheng Shuwen,Li Shuti

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=5/a=054006/pdf

Reference21 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Origin of efficiency droop in GaN-based light-emitting diodes

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of graded Al content in the last quantum barrier on the luminescence properties of ultraviolet InGaN/AlGaN multiple quantum wells;Micro and Nanostructures;2023-12

2. Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients;Crystals;2021-11-15

3. Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer;Chinese Physics B;2019-01

4. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer;Nanomaterials;2018-07-09

5. Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes*;Chinese Physics B;2018-02-01

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