Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer
Author:
Funder
National Natural Science Foundation of China
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/8/7/512/pdf
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1. Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure
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