Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer-Reference-Cited by-同舟云学术

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Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer

Published:2019-01 Issue:1 Volume:28 Page:018503
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Wang Lin-Yuan,Song Wei-Dong,Hu Wen-Xiao,Li Guang,Luo Xing-Jun,Wang Hu,Xiao Jia-Kai,Guo Jia-Qi,Wang Xing-Fu,Hao Rui,Yi Han-Xiang,Wu Qi-Bao,Li Shu-Ti

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/28/1/018503/pdf

Reference18 articles.

1. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

2. Is research ethics committee approval necessary for publication of prospective surgical research studies?

3. Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

4. Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality

5. Prospects for LED lighting

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength;Physics of the Solid State;2024-07

2. Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier;Electronics;2024-04-08

3. Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously;Semiconductor Science and Technology;2024-02-16

4. BAlGaN light‐emitting diode emitting at 350 nm;Electronics Letters;2023-10

5. Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB;Transactions on Electrical and Electronic Materials;2023-08-10

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