Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961544
Reference37 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)
3. Solid-State Light Sources Getting Smart
4. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
5. Spontaneous polarization and piezoelectric constants of III-V nitrides
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