Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-023-00467-3.pdf
Reference40 articles.
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2. J. Sun, H. Sun, X. Yi, X. Yang, T. Liu, X. Wang, X. Zhang, X. Fan, Z. Zhang, Z. Guo, Efficiency enhancement in AlGaN deep ultraviolet light-emitting diodes by adjusting Mg doped staggered barriers. Superlattices Microstruct. 107, 49–55 (2017). https://doi.org/10.1016/j.spmi.2017.03.055
3. A.J. Ghazai, S.M. Thahab, H.A. Hassan, Z. Hassan, The effects of quantum wells number and the built-in polarization on the performance of quaternary AlInGaN UV laser diode. Optik (Stuttg). 123, 856–859 (2012). https://doi.org/10.1016/j.ijleo.2011.06.053
4. J. Zhang, W. Liu, S. Zhang, Understanding the luminescence characteristics of ultraviolet InGaN/AlGaN multiple quantum wells with different in gradients. Crystals (Basel). 11, 1390 (2021). https://doi.org/10.3390/cryst11111390
5. L. Lu, Z. Wan, F. Xu, X. Wang, C. Lv, M. Jiang, Q. Chen, Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Si-doping design of quantum barriers. Superlattices Microstruct. 109, 687–692 (2017). https://doi.org/10.1016/j.spmi.2017.05.054
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