Author:
Ghazai A.J.,Thahab S.M.,Hassan H. Abu,Hassan Z.
Funder
University Science Malaysia USM
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Numerical study on optimization of active layer structure for GaN/AlGaN multiple-quantum well laser diodes;Chen;J. Lightwave Technol.,2008
2. InAlGaN quaternary multi-quantum wells UV laser diode performance and characterization;Thahab;World Acad. Sci. Eng. Technol.,2009
3. Characteristics of ultraviolet laser diodes composed of quaternary AlInGaN;Nagahama;Jpn. J. Appl. Phys.,2001
4. 365nm ultraviolet laser diodes composed of quaternary AlInGaN alloy;Masui;Jpn. J. Appl. Phys.,2003
5. Integrated System Engineering (ISE TCAD)AG, Switzerland, http://www.synopsys.com.
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