Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate-Reference-Cited by-同舟云学术

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Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate

Published:2013-11 Issue:11 Volume:34 Page:114007
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Han Kai,Ma Xueli,Xiang Jinjuan,Yang Hong,Wang Wenwu

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/34/i=11/a=114007/pdf

Reference12 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

3. Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

4. Characterization of the Ultrathin $\hbox{HfO}_{2}$ and Hf-Silicate Films Grown by Atomic Layer Deposition

5. Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dipole formation to modulate flatband voltage using ALD Al2O3 and La2O3 at the interface between HfO2 and Si or Ge substrates;Applied Surface Science;2023-01

2. Effect of microwave annealing on electrical characteristics of TiN/Al/TiN/HfO2/Si MOS capacitors;Applied Physics Letters;2017-07-03

3. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure;PLOS ONE;2016-08-29

4. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks;Journal of Semiconductors;2016-05

5. Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors;Journal of Materials Science: Materials in Electronics;2015-07-23

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