1. K. Mistry ,
C. Allen ,
C. Auth ,
B. Beattie ,
D. Bergstrom ,
M. Bost ,
M. Brazier ,
M. Buehler ,
A. Cappellani ,
R. Chau ,
C. H. Choi ,
G. Ding ,
K. Fischer ,
T. Ghani ,
R. Grover ,
W. Han ,
D. Hanken ,
M. Hattendorf ,
J. He ,
J. Hicks ,
R. Huessner ,
D. Ingerly ,
P. Jain ,
R. James ,
L. Jong ,
S. Joshi ,
C. Kenyon ,
K. Kuhn ,
K. Lee ,
H. Liu ,
J. Maiz ,
B. McIntyre ,
P. Moon ,
J. Neirynck ,
S. Pae ,
C. Parker ,
D. Parsons ,
C. Prasad ,
L. Pipes ,
M. Prince ,
P. Ranade ,
T. Reynolds ,
J. Sandford ,
L. Shifren ,
J. Sebastian ,
J. Seiple ,
D. Simon ,
S. Sivakumar ,
P. Smith ,
C. Thomas ,
T. Troeger ,
P. Vandervoorn ,
S. Williams , and
K. Zawadzki , in IEEE International Electron Devices Meeting Proceedings, 2007, pp. 247–250.
2. Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
3. Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors
4. Rapid thermal post-metallization annealing effect on thin gate oxides
5. Gate Engineering to Improve Effective Resistance of 28-nm High- $k$ Metal Gate CMOS Devices