High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary
Author:
Affiliation:
1. School of Electrical Engineering, Korea Advanced Institute of Science & Technology,34141, Daehak-ro 291, Yuseong-gu, Daejeon, Republic of Korea
Funder
National Research Foundation of Korea
Samsung Advanced Institute of Technology
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00623
Reference60 articles.
1. Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
3. Review and perspective on ferroelectric HfO2-based thin films for memory applications
4. Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process
5. Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature
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