Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks-Reference-Cited by-同舟云学术

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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

Published:2016-05 Issue:5 Volume:37 Page:054005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Xu Hao,Yang Hong,Wang Yanrong,Wang Wenwu,Wan Guangxing,Ren Shangqing,Luo Weichun,Qi Luwei,Zhao Chao,Chen Dapeng,Liu Xinyu,Ye Tianchun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/37/i=5/a=054005/pdf

Reference22 articles.

1. Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate

2. Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack

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