Gallium nitride heterostructures on 3D structured silicon-Reference-Cited by-同舟云学术

Gallium nitride heterostructures on 3D structured silicon

Published:2008-08-20 Issue:40 Volume:19 Page:405301
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Fündling Sönke,Sökmen Ünsal,Peiner Erwin,Weimann Thomas,Hinze Peter,Jahn Uwe,Trampert Achim,Riechert Henning,Bakin Andrey,Wehmann Hergo-Heinrich,Waag Andreas

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/19/i=40/a=405301/pdf

Reference27 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. Characterization of threading dislocations in GaN epitaxial layers

3. Characterization of growth defects in thin GaN layers with X-ray microbeam

4. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

5. Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes

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