Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748329
Reference9 articles.
1. Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface
2. Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes
3. Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
4. Electrical effects of plasma damage in p-GaN
5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
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