Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface-Reference-Cited by-同舟云学术

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Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Published:2005-07-22 Issue:9 Volume:16 Page:1844-1848
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Huang Hung-Wen,Chu J T,Kao C C,Hseuh T H,Lu T C,Kuo H C,Wang S C,Yu C C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/16/i=9/a=071/pdf

Reference14 articles.

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

5. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface

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3. Investigation of InGaN-Based Green Micro-Photonic-Crystal- Light-Emitting-Diodes with Bottom, Nanoporous, Distributed Bragg Reflectors;Photonics;2022-12-05

4. Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells;Nanoscale Research Letters;2021-09-16

5. Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes;Applied Physics Express;2020-03-30

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