Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Author:

Isa Fabio12,Chèze Caroline3,Siekacz Marcin45,Hauswald Christian3,Lähnemann Jonas3,Fernández-Garrido Sergio3,Kreiliger Thomas1,Ramsteiner Manfred3,Dasilva Yadira Arroyo Rojas6,Brandt Oliver3,Isella Giovanni2,Erni Rolf6,Calarco Raffaella3,Riechert Henning3,Miglio Leo7

Affiliation:

1. Laboratory for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, CH-8093 Zurich, Switzerland

2. L-NESS and Department of Physics, Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy

3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

4. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warszawa, Poland

5. TopGaN sp. z.o.o., al. Prymasa Tysiąclecia 98, 01-424 Warszawa, Poland

6. Electron Microscopy Center EMPA, Swiss Federal Laboratories for Materials Science and Technology, Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland

7. L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy

Funder

Eidgenössische Technische Hochschule Zürich

Schweizerische Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Cordis

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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