Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices-Reference-Cited by-同舟云学术

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Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices

Published:2012-07-17 Issue:31 Volume:23 Page:315202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lee S B,Yoo H K,Kim K,Lee J S,Kim Y S,Sinn S,Lee D,Kang B S,Kahng B,Noh T W

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=31/a=315202/pdf

Reference43 articles.

1. Electrical phenomena in amorphous oxide films

2. Who Wins the Nonvolatile Memory Race?

3. Thin Film Metal-Oxides

4. BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES

5. Nanoionics-based resistive switching memories

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1. Visualizing the Local Composition Changes during Resistive Switching in Planar TaOx-ReRAMs;ACS Applied Electronic Materials;2023-07-26

2. Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling;physica status solidi (a);2023-01-27

3. Modulation of Resistive Switching Behaviour of TaO_x-based Memristor Through Device Engineering;2022 IEEE 7th International conference for Convergence in Technology (I2CT);2022-04-07

4. Nanoionic memristive phenomena in metal oxides: the valence change mechanism;Advances in Physics;2021-04-03

5. Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies;Solid-State Electronics;2021-02

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