Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling-Reference-Cited by-同舟云学术

Understanding the Influence of Metal Oxide Layer Thickness and Defects on Resistive Switching Behavior Through Numerical Modeling

Published:2023-01-27 Issue: Volume: Page:2200730
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Dias Catarina¹^ORCID,Ventura João¹

Affiliation:

1. IFIMUP Departamento de Física e Astronomia Faculdade de Ciências Universidade do Porto Rua do Campo Alegre s/n 4169-007 Porto Portugal

Funder

Fundação para a Ciência e a Tecnologia

Federación Española de Enfermedades Raras

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200730

Reference40 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Scalability of voltage-controlled filamentary and nanometallic resistance memory devices

3. Compute-in-Memory Chips for Deep Learning: Recent Trends and Prospects

4. Memristor-Based Neuromodulation Device for Real-Time Monitoring and Adaptive Control of Neuronal Populations

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